Datenblatt-pdf.com


QID3350001 Schematic ( PDF Datasheet ) - Powerex

Teilenummer QID3350001
Beschreibung Dual IGBT HVIGBT Module
Hersteller Powerex
Logo Powerex Logo 




Gesamt 6 Seiten
QID3350001 Datasheet, Funktion
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID3350001 Preliminary
Dual IGBT
HVIGBT Module
500 Amperes/3300 Volts
A
C
Q
DD
F
(4 PLACES)
E
E1 G C2
J HB
T
U
V
C1
E1 E2 (C1)
E2
C2
G1 G2
RL
S (5 PLACES)
M
G
NW
PX
E1 C2
E1 C2
G1
G2
E2
C1 E2
K
(4 PLACES)
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.11 130.0
B 5.51 140.0
C 4.49 114.0
D 2.24
57.0
E 2.42
61.5
F M8 M8 Metric
G 0.71
18.0
H 4.88 124.0
J 1.57
40.0
K 0.27
7.0 Dia.
L M4 M4 Metric
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.51
1.57
1.71
1.49
0.20
1.10
1.72
1.86
2.39
0.65
1.85
Millimeters
13.0
39.9
43.4
38.0
5.0
28.0
43.8
47.2
60.6
16.5
47.0
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-55 to 150°C Extended 
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
AlSiC Baseplate
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Rugged SWSOA and RRSOA
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
11/14 Rev. 7
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1






QID3350001 Datasheet, Funktion
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3350001
Dual IGBT HVIGBT Module
500 Amperes/3300 Volts
Preliminary
1250
REVERSE BIAS SAFE
OPERATING AREA (TYPICAL)
1000
750
500
250
VCC ≤ 2500V
VGE = +15V/-8V
RG(off) = 20Ω
Tj = 150°C
0
0 1000 2000 3000 4000
COLLECTOR EMITTER VOLTAGE, VCES, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
1.2
Single Pulse
1.0
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.8 0.0275°C/W
(IGBT)
0.6
Rth(j-c) =
0.052°C/W
(FWDi)
0.4
0.2
0
10-3
10-2
10-1
TIME, (s)
100
101
1250
FREE-WHEEL DIODE
REVERSE RECOVERY SAFE
OPERATING AREA (TYPICAL)
1000
750
500
250
VCC ≤ 2500V
di/dt = 1kA/µs
Tj = 150°C
0
0 1000 2000 3000 4000
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6 11/14 Rev. 7

6 Page







SeitenGesamt 6 Seiten
PDF Download[ QID3350001 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
QID3350001Dual IGBT HVIGBT ModulePowerex
Powerex

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche