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GA01PNS80-CAL Schematic ( PDF Datasheet ) - GeneSiC

Teilenummer GA01PNS80-CAL
Beschreibung Silicon Carbide PiN Diode Chip
Hersteller GeneSiC
Logo GeneSiC Logo 




Gesamt 6 Seiten
GA01PNS80-CAL Datasheet, Funktion
Silicon Carbide
PiN Diode Chip
 
Die Datasheet
GA01PNS80-CAL
VRRM
IF @ 25 oC
= 8000 V
= 2A
Features
8 kV blocking
210 °C operating temperature
Fast turn off characteristics
Soft reverse recovery characteristics
Ultra-Fast high temperature switching
Die Size = 2.4 mm x 2.4 mm
 
Advantages
Reduced stacking
Reduced system complexity/Increased reliability
Applications
Voltage Multiplier
Ignition/Trigger Circuits
Oil/Downhole
Lighting
Defense
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Operating and storage temperature
VRRM
IF
IF(RMS)
Tj , Tstg
Conditions
Values
8
2
1
-55 to 210
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total reverse recovery charge
Switching time
Total capacitance
Total capacitive charge
VF
IF = 2 A, Tj = 25 °C
IF = 2 A, Tj = 210 °C
IR
VR = 8 kV, Tj = 25 °C
VR = 8 kV, Tj = 210 °C
Qrr
ts
IF ≤ IF,MAX
dIF/dt = 70 A/μs
Tj = 210 °C
VR = 1000 V
IF = 1.5 A
VR = 1000 V
IF = 1.5 A
VR = 1 V, f = 1 MHz, Tj = 25 °C
C VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
QC VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
6.1
4.3
4
4
558
< 236
26
5
4
5.4
max.
Unit
kV
A
A
°C
Unit
V
µA
nC
ns
pF
nC
 
 
Apr 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 1 of 5






GA01PNS80-CAL Datasheet, Funktion
Die Datasheet
GA01PNS80-CAL
 
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/baredie/pin/GA01PNS80-CAL_SPICE.pdf) into LTSPICE
(version 4) software for simulation of the GA01PNS80-CAL device.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.1
$
* $Date: 30-APR-2015
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GA01PNS80-CAL SPICE Model
*
. MODEL GA01PNS80 D
+ IS
9.2491e-015
+ RS
1.02512
+ N 3.3373
+ IKF
0.00011784
+ EG
3.23
+ XTI
25
+ TRS1
-0.0024
+ CJO
2.7E-11
+ VJ
2.304
+ M 0.376
+ FC
0.5
+ BV
8000
+ IBV
1.00E-03
+ VPK
8000
+ IAVE
1
+ TYPE
SiC_PiN
+ MFG
GeneSiC_Semi
*
* End of GA01PNS80-CAL SPICE Model
Apr 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 1 of 1 

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SeitenGesamt 6 Seiten
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