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Número de pieza | GA01PNS100-CAU | |
Descripción | Silicon Carbide PiN Diode Chip | |
Fabricantes | GeneSiC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GA01PNS100-CAU (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Silicon Carbide
PiN Diode Chip
Die Datasheet
GA01PNS100-CAU
VRRM
IF @ 25 oC
QC
= 10000 V
= 2A
= 5 nC
Features
10 kV blocking
210 °C operating temperature
Fast turn off characteristics
Soft reverse recovery characteristics
Ultra-Fast high temperature switching
Advantages
Industry’s lowest conduction losses
Reduced stacking
Reduced system complexity/Increased reliability
Die Size = 2.4 mm x 2.4 mm
Applications
Voltage Multiplier
Ignition/Trigger Circuits
Oil/Downhole
Lighting
Defense
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Operating and storage temperature
VRRM
IF
IF(RMS)
Tj , Tstg
Conditions
TC ≤ 150 °C
TC ≤ 150 °C
Values
10
2
1
-55 to 210
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total reverse recovery charge
Switching time
Total capacitance
Total capacitive charge
VF
IF = 2 A, Tj = 25 °C
IF = 2 A, Tj = 210 °C
IR
VR = 10 kV, Tj = 25 °C
VR = 10 kV, Tj = 210 °C
Qrr
ts
IF ≤ IF,MAX
dIF/dt = 70 A/μs
Tj = 210 °C
VR = 1000 V
IF = 1.5 A
VR = 1000 V
IF = 1.5 A
VR = 1 V, f = 1 MHz, Tj = 25 °C
C VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
QC VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
4.4
4.1
0.1
558
< 236
20
5
4
5
max.
4.8
4.5
3
50
Unit
kV
A
A
°C
Unit
V
µA
nC
ns
pF
nC
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 1 of 5
1 page Date
2015/02/24
2012/08/15
Die Datasheet
GA01PNS100-CAU
Revision
1
0
Revision History
Comments
Inserted Mechanical Parameters
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 5 of 5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet GA01PNS100-CAU.PDF ] |
Número de pieza | Descripción | Fabricantes |
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