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GB01SHT12-CAL Schematic ( PDF Datasheet ) - GeneSiC

Teilenummer GB01SHT12-CAL
Beschreibung High Temperature Silicon Carbide Power Schottky Diode
Hersteller GeneSiC
Logo GeneSiC Logo 




Gesamt 5 Seiten
GB01SHT12-CAL Datasheet, Funktion
 
High Temperature Silicon Carbide
Power Schottky Diode
Features
1200 V Schottky rectifier
210°C maximum operating temperature
Zero reverse recovery charge
Superior surge current capability
Positive temperature coefficient of VF
Temperature independent switching behavior
Lowest figure of merit QC/IF
Available screened to Mil-PRF-19500
Die Datasheet
GB01SHT12-CAL  
VRRM
IF @ 25 oC
QC
= 1200 V
= 2.5 A
= 6 nC
 
Die Size = 0.9 mm x 0.9 mm
Advantages
High temperature operation
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Industry’s lowest reverse recovery charge
Industry’s lowest device capacitance
Ideal for output switching of power supplies
Best in class reverse leakage current at operating temperature
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
I2t value
Power dissipation
Operating and storage temperature
VRRM
IF
IF
IF(RMS)
IF,SM
IF,max
∫i2 dt
Ptot
Tj , Tstg
TC = 25 °C, RthJC = 9.52
TC ≤ 190 °C, RthJC = 9.52
TC ≤ 190 °C, RthJC = 9.52
TC = 25 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 25 °C, RthJC = 9.52
Values
1200
2.5
0.75
1.3
8
65
0.5
26
-55 to 210
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total capacitive charge
Switching time
Total capacitance
VF
IF = 0.75 A, Tj = 25 °C
IF = 0.75 A, Tj = 210 °C
IR
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 210 °C
QC
ts
IF ≤ IF,MAX
dIF/dt = 200 A/μs
Tj = 210 °C
VR = 400 V
VR = 960 V
VR = 400 V
VR = 960 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
C VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
1.7
2.8
1
10
6
11
< 17
66
10
8
max.
10
100
Unit
V
A
A
A
A
A
A2S
W
°C
Unit
V
µA
nC
ns
pF
Feb 2015
 
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/   
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