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PDF 2SD879 Data sheet ( Hoja de datos )
| Número de pieza | 2SD879 | |
| Descripción | Silicon NPN Transistor | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector Current-IC= 3.0A
·Low Saturation Voltage -
: VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 60mA（Pulse）
·Excellent Linearity of hFE in The Region From Low
Current to High Current.
APPLICATIONS
·In applications where two NiCd batteries are used to
provide 2.4V, two 2SD879s are used.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
30 V
VCEO
Collector-Emitter Voltage
10 V
VCEX
Collector-Emitter Voltage
20 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
3.0 A
ICP Collector Current-Pulse
5.0 A
PC Collector Power Dissipation
1.0 W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc Product Specification
2SD879
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD879.PDF ] | |
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