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PDF KTB1260 Data sheet ( Hoja de datos )
| Número de pieza | KTB1260 | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de KTB1260 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTD1898.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
PC*
Tj
Storage Temperature Range
Tstg
* Mounted on ceramic substrate(250mm2 0.8t)
RATING
-80
-80
-5
-1
1
500
1
150
-55 150
UNIT
V
V
V
A
A
mW
W
KTB1260
EPITAXIAL PLANAR PNP TRANSISTOR
AC
H
G
DD
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=-60V, IE=0
Emitter Cut-off Current
IEBO VEB=-4V, IC=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
DC Current Gain
hFE(Note) VCE=-3V, IC=-100mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-500mA, IB=-50mA
Transition Frequency
fT VCE=-5V, IC=-50mA, f=30MHz
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE Classification O:70 140, Y:120 240, GR:200 400
MIN.
-
-
-80
70
-
-
-
TYP.
-
-
-
-
-
100
25
MAX.
-1
-1
-
400
-0.4
-
-
UNIT
A
A
V
V
MHz
pF
2003. 12. 12
Revision No : 2
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTB1260.PDF ] | |
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