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PDF KTA1381 Data sheet ( Hoja de datos )
| Número de pieza | KTA1381 | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
HIGH-DEFINITION CRT DISPLAY,
VIDEO OUTPUT APPLICATIONS.
FEATURES
High breakdown voltage : VCEO 300V.
Small reverse transfer capacitance and
excellent high frequency characteristic.
: Cre=2.3pF (VCB=30V, f=1MHz)
Complementary KTC3503.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
VCBO
VCEO
VEBO
IC
ICP
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Storage Temperature Range
Tj
Tstg
RATING
-300
-300
-5
-100
-200
1.5
7
150
-55 150
UNIT
V
V
V
mA
W
KTA1381
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
Reverse Transfer Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Base-Emitter Breakdown Voltage
Note : hFE Classification O:60 120, Y:100
ICBO
IEBO
hFE (Note)
fT
Cob
Cre
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
200
TEST CONDITION
VCB=-200V, IE=0
VEB=-4V, IC=0
VCE=-10V, IC=-10mA
VCE=-30V, IC=-10mA
VCB=-30V, IE=0, f=1MHz
VCB=-30V, IE=0, f=1MHz
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
IC=-10 A, IE=0
IC=-1mA, IB=0
IE=-10 A, IC=0
MIN.
-
-
60
-
-
-
-
-
-300
-300
-5
TYP.
-
-
-
150
3.1
2.3
-
-
-
-
-
MAX.
-0.1
-0.1
200
-
-
-
-0.6
-1.0
-
-
-
UNIT
A
A
MHz
pF
pF
V
V
V
V
V
2003. 7. 24
Revision No : 3
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTA1381.PDF ] | |
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