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PDF MMBTA64 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA64 | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base
Voltage
Collector-Emitter
Voltage
MMBTA63/64 VCBO
MMBTA63/64 VCES
-30
-30
Emitter-Base Voltage
Collector Current
DC
Pulse
VEBO
IC
ICP
-10
-500
-1
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
A
mW
MMBTA63/64
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
V(BR)CES
ICBO
IEBO
IC=-0.1mA, IB=0
VCB=-30V, IE=0
VEB=-10V, IC=0
DC Current Gain
MMBTA63
MMBTA64
MMBTA63
MMBTA64
hFE(1)
IC=-10mA, VCE=-5V
hFE(2)
IC=-100mA, VCE=-5V
Collector-Emitter
Saturation Voltage
Base Emitter
Voltage
MMBTA63/64
MMBTA63/64
VCE(sat)
VBE
Current Gain
Bandwith Product
MMBTA63/64
fT
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
IC=-100mA, IB=-0.1mA
IC=-100mA, VCE=-5V
IC=-10mA, f=100MHz
VCE=-5V
MARK SPEC
TYPE
MARK
MMBTA63
AGX
MMBTA64
AFX
Marking
A XType Name
MIN.
-30
-
-
5,000
10,000
10,000
20,000
-
TYP.
-
-
-
-
-
-
-
-
MAX.
-
-0.1
-0.1
-
-
-
-
-1.5
UNIT
V
A
A
V
- - -2.0 V
125 -
- MHz
Lot No.
2008. 8. 29
Revision No : 5
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBTA64.PDF ] | |
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