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KU3600N10W Schematic ( PDF Datasheet ) - KEC

Teilenummer KU3600N10W
Beschreibung N-Ch Trench MOSFET
Hersteller KEC
Logo KEC Logo 




Gesamt 6 Seiten
KU3600N10W Datasheet, Funktion
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
DC/DC Converters.
FEATURES
VDSS(Min.)= 100V, ID= 1.7A
Drain-Source ON Resistance : RDS(ON)=0.36
Qg(typ.) =4.2nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
VDSS
100
Gate-Source Voltage
VGSS
20
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
TA=25
Derate above25
ID
IDP
EAS
EAR
dv/dt
PD
1.7*
1.0*
6.4*
12.4
0.1
4.5
2.0*
0.016
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Thermal Characteristics
Tstg -55 150
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5*
* : Surface Mounted on FR4 Board (50mm 50mm, 1.0t)
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
KU3600N10W
N CHANNEL TRENCH MOS FIELD
EFFECT TRANSISTOR
PIN CONNECTION
2011. 4. 7
Revision No : 0
1/6






KU3600N10W Datasheet, Funktion
KU3600N10W
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
DUT
L
0.5 VDSS
10V
driver
VGS
VDS
ISD
(DUT)
IS
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2011. 4. 7
Revision No : 0
6/6

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