Datenblatt-pdf.com


6MBI100S-140 Schematic ( PDF Datasheet ) - Fuji Electric

Teilenummer 6MBI100S-140
Beschreibung IGBT Module
Hersteller Fuji Electric
Logo Fuji Electric Logo 




Gesamt 4 Seiten
6MBI100S-140 Datasheet, Funktion
6MBI100S-140
IGBT Modules
IGBT MODULE ( S series)
1400V / 100A 6 in one-package
Features
· Compact Package
· P.C.Board Mount Module
· Low VCE(sat)
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous Tj=25°C
current
Tj=75°C
1ms Tj=25°C
Tj=75°C
1ms
Max. power dissipation (1 device)
Operating temperature
Storage temperature
Isolation voltage *1
Screw torque
Symbol
VCES
VGES
IC
IC pulse
-IC
-IC pulse
PC
Tj
Tstg
Vis
Mounting *2
Rating
Unit
1400
V
±20 V
150 A
100
300 A
200
100 A
200 A
700 W
+150
°C
-40 to +125
°C
AC 2500 (1min.) V
3.5 N·m
Equivalent Circuit Schematic
21(P)
13(P)
1(Gu)
5(Gv)
9(Gw)
2(Eu)
3(Gx)
4(Ex)
20(N)
6(Ev)
19(U)
7(Gy)
8(Ey)
10(Ew)
17(V)
11(Gz)
12(Ez)
15(W)
14(N)
*1:All terminals should be connected together when isolation test will be done.
*2: Recommendable value : 2.5 to 3.5 N·m (M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
ICES
IGES
VGE(th)
VCE(sat)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Cies
Coes
Cres
ton
tr
tr(i)
toff
tf
VF
Reverse recovery time
trr
Characteristics
Min.
Typ.
––
––
5.5 7.2
– 2.4
– 3.0
– 12000
– 2500
– 2200
– 0.35
– 0.25
– 0.1
– 0.45
– 0.08
– 2.6
– 2.2
––
Max.
1.0
0.2
8.5
2.7
1.2
0.6
1.0
0.3
3.4
0.35
Conditions
VGE=0V, VCE=1400V
VCE=0V, VGE=±20V
VCE=20V, IC=100mA
Tj=25°C VGE=15V, IC=100A
Tj=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=800V
IC=100A
VGE=±15V
RG=12
Tj=25°C
Tj=125°C
IF=100A
IF=100A, VGE=0V
Unit
mA
µA
V
V
pF
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Min.
Typ.
Max.
Rth(j-c)
– 0.18 IGBT
Thermal resistance
Rth(j-c)
– 0.36 FWD
Rth(c-f)*2
0.05 –
the base to cooling fin
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Unit
°C/W
°C/W
°C/W





SeitenGesamt 4 Seiten
PDF Download[ 6MBI100S-140 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
6MBI100S-140IGBT ModuleFuji Electric
Fuji Electric
6MBI100S-140-01IGBT ModuleFuji Electric
Fuji Electric

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche