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PDF KTA1038 Data sheet ( Hoja de datos )
| Número de pieza | KTA1038 | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
ᴌHigh Breakdown Voltage : VCEO=-100V.
ᴌLow Collector-Emitter Saturation Voltage.
: VCE(sat)=-2.0V(Max.)
ᴌComplementary to KTC2018.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Base Current
Collector Power Dissipation
(Tc=25ᴱ)
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IE
IB
PC
Tj
Tstg
RATING
-100
-100
-5
-5
5
-0.5
40
150
-55ᴕ150
UNIT
V
V
V
A
A
A
W
ᴱ
ᴱ
KTA1038
EPITAXIAL PLANAR PNP TRANSISTOR
A
R
S
D
T
L
CC
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ3.60 +_ 0.20
3.00
6.70 MAX
13.60+_ 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50+_ 0.20
8.00+_ 0.20
2.90 MAX
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-BaseBreakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
V(BR)EBO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
Note : hFE(1) Classification O:70ᴕ140 , Y:120ᴕ240
TEST CONDITION
VCB=-100V, IE=0
VEB=-5V, IC=0
IC=-50mA, IB=0
IE=-10mA, IC=0
VCE=-5V, IC=-1A
VCE=-5V, IC=-4A
IC=-4A, IB=-0.4A
VCE=-5V, IC=-4A
VCE=-5V, IC=-1A
VCB=-10V, IE=0, f=1MHz
MIN.
-
-
-100
-5.0
70
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
30
90
MAX.
-100
-1.0
-
-
240
-
-2.0
-1.5
-
-
UNIT
ỌA
mA
V
V
V
V
MHz
pF
1998. 12. 31
Revision No : 1
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KTA1038.PDF ] | |
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