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2ED020I12-FI Schematic ( PDF Datasheet ) - Infineon

Teilenummer 2ED020I12-FI
Beschreibung Dual IGBT Driver IC
Hersteller Infineon
Logo Infineon Logo 




Gesamt 22 Seiten
2ED020I12-FI Datasheet, Funktion
Final Datasheet, September 2007
2ED020I12-FI
Dual IGBT Driver IC
Power Managment & Drives
Never stop thinking.






2ED020I12-FI Datasheet, Funktion
Final Data
High and Low Side Driver
2ED020I12-FI
Pin Configuration and Functionality
Pin Symbol
Function
9 OP– Inverting input of general purpose OP
10 OP+
Non-inverting input of general purpose OP
11 GNDL Low side power ground 1)
12 OutL
Low side gate driver output
13 VSL
Low side supply voltage
14 n.c.
(not connected)
15 n.e.
(not existing)
16 n.e.
(not existing)
17
GNDH
High side (power) ground
18 VSH
High side supply voltage
19 OutH
High side gate driver output
20
GNDH
High side (power) ground
Table 1
Pin Description (cont’d)
1) Please note : GNDL has to be connected directly to GND
Final Datasheet
6 September 2007

6 Page









2ED020I12-FI pdf, datenblatt
Final Data
High and Low Side Driver
2ED020I12-FI
Electrical Parameters
Parameter
Junction temperature
Symbol
TJ
Limit Values
min.
max.
–40 105
Junction temperature
TJ
– 40
125
1) With reference to high side ground GNDH.
2) With respect to both GND and GNDL.
Unit Remarks
°C Industrial
applications,
useful
lifetime
87600h
°C Other
applications,
useful
lifetime
15000h
5.3 Electrical Characteristics
Note: The electrical characteristics involve the spread of values guaranteed for the
supply voltages, load and junction temperature given below. Typical values
represent the median values, which are related to production processes. Unless
otherwise noted all voltages are given with respect to ground (GND).
VSL = VSH – GNDH = 15V, CL = 1nF, TA = 25°C. Positive currents are assumed
to be flowing into pins.
Voltage Supply
Parameter
Symbol
Limit Values Unit Test Condition
min. typ max.
High side
leakage current
High side quiescent
supply current
IGNDH
IVSH
High side undervoltage VVSH1)
lockout, upper threshold
High side undervoltage VVSH1)
lockout, lower threshold
—0
µA GNDH = 1.2kV
GNDL = 0V
— 2.4 3.2 mA VSH = 15V1)
— 2.3 3.2 mA VSH = 15V1)
TJ = 125 °C
10.9 12.2 13.5 V
— 11.2
—V
High side undervoltage VVSH 0.7 1
lockout hysteresis
1.3 V
Final Datasheet
12 September 2007

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