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Número de pieza | 5P4M | |
Descripción | Thyristors | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 5P4M (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
isc Thyristors
APPLICATIONS
·Motor speed control for household
appliance.
·Temperature control for heater and
constant temperature box.
·Constant voltage power source and
battery charger.
·Automotive application such as regulator.
·Various solid state relay etc.
isc Product Specification
5P4M
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) On-state current
ITSM Surge non-repetitive on-state current
PGM Peak gate power dissipation
PG(AV) Average gate power dissipation
IFGM Peak gate forward current
VRGM Peak gate reverse voltage
Tj Junction temperature
MIN
400 (note:RGK=1kΩ)
400 (note:RGK=1kΩ)
5(Tc=103℃,θ=180°Single phase(1/2wave)
80
5 (f ≥50Hz, Duty ≤10%)
0.5
2 (f ≥50Hz, Duty ≤10%)
10
-40 to + 125
UNIT
V
V
A
A
W
W
A
V
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
IRRM Repetitive peak reverse current VRM=VRRM,Tj=125℃
2 mA
IDRM Repetitive peak off-state current VDM=VDRM,Tj=125℃
2 mA
VTM On-state voltage
ITM=10A
1.4 V
IGT Gate-trigger current
VDM=6V;RL=100Ω
10 mA
VGT Gate-trigger voltage
VDM=6V;RL=100Ω
1.5 V
VGD Gate non-trigger voltage
VDRM=1/2VDRM,Tj=125℃
0.2
V
IH Holding current
VD=24V
10 mA
Rth(j-c) Thermal resistance
Junction to case
3 ℃/W
isc website:www.iscsemi.cn
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 5P4M.PDF ] |
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