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Teilenummer | TMP2N65AZ |
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Beschreibung | N-channel MOSFET | |
Hersteller | TRinno | |
Logo | ||
Gesamt 7 Seiten Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
TMP2N65AZ(G)/TMPF2N65AZ(G)
BVDSS
650V
N-channel MOSFET
ID RDS(on)
1.8A
< 4.6W
Device
TMP2N65AZ / TMPF2N65AZ
TMP2N65AZG / TMPF2N65AZG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP2N65AZ / TMPF2N65AZ
TMP2N65AZG / TMPF2N65AZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP2N65AZ(G) TMPF2N65AZ(G)
650
±30
1.8 1.8 *
1.38 1.38 *
7.2 7.2 *
77
1.8
5.2
52.0 17.3
0.41 0.13
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP2N65AZ(G)
2.4
62.5
August 2012 : Rev0
www.trinnotech.com
TMPF2N65AZ(G)
7.2
62.5
Unit
℃/W
℃/W
1/7
TMP2N65AZ(G)/TMPF2N65AZ(G)
TO-220AB-3L MECHANICAL DATA
August 2012 : Rev0
www.trinnotech.com
6/7
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ TMP2N65AZ Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
TMP2N65AZ | N-channel MOSFET | TRinno |
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