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Teilenummer | 2N4339 |
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Beschreibung | N-Channel JFETs | |
Hersteller | Vishay | |
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Gesamt 6 Seiten 2N4338/4339/4340/4341
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4338
2N4339
2N4340
2N4341
VGS(off) (V)
–0.3 to –1
–0.6 to –1.8
–1 to –3
–2 to –6
V(BR)GSS Min (V) gfs Min (mS)
–50 0.6
–50 0.8
–50 1.3
–50 2
IDSS Max (mA)
0.6
1.5
3.6
9
FEATURES
D Low Cutoff Voltage: 2N4338 <1 V
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
BENEFITS
D Full Performance from Low-Voltage
Power Supply: Down to 1 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
APPLICATIONS
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultrahigh Input Impedance
Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
TO-206AA
(TO-18)
S
1
2
D
3
Top View
G and Case
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 175_C
For applications information see AN102 and AN106.
Document Number: 70240
S-04028—Rev. E, 04-Jun-01
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Notes
a. Derate 2 mW/_C above 25_C
www.vishay.com
7-1
2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
f = 1 MHz
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
f = 1 MHz
84
6
VDS = 0 V
4
10 V
2
0
0 –4 –8 –12 –16 –20
VGS – Gate-Source Voltage (V)
Output Conductance vs. Drain Current
3
VGS(off) = –1.5 V
VDS = 10 V
f = 1 kHz
2.4
1.8
0.8
0.4
0
0.01
TA = –55_C
25_C
125_C
0.1
ID – Drain Current (mA)
1
3
VDS = 0 V
2
1 10 V
0
0 –4 –8 –12 –16 –20
VGS – Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
20
VDS = 10 V
16
12 ID = 100 mA
8
ID = IDSS
4
0
10
100 1 k 10 k
f – Frequency (Hz)
100 k
www.vishay.com
7-6
Document Number: 70240
S-04028—Rev. E, 04-Jun-01
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ 2N4339 Schematic.PDF ] |
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