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Número de pieza | DPG30I400HA | |
Descripción | High Performance Fast Recovery Diode | |
Fabricantes | IXYS | |
Logotipo | ||
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High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG30I400HA
31
DPG30I400HA
VRRM
I FAV
t rr
=
=
=
400 V
30 A
45 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
1 page DPG30I400HA
Fast Diode
80
70
60
50
IF 40
[A] 30
20
10
TVJ = 150°C
25°C
1.0
TVJ = 125°C
VR = 270 V
0.8
Qrr
0.6
[μC]
0.4
60 A
30 A
15 A
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.2
0
200 400 600
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
20
TVJ = 125°C
VR = 270 V
16
IRR
12
[A]
8
60 A
30 A
15 A
4
0 200 400 600
-diF /dt [A/μs]
Fig. 3 Typ. reverse recovery current
IRR versus -diF /dt
1.6
1.4
1.2
1.0
Kf 0.8
0.6 IRR
0.4
0.2 Qrr
140
120
100
trr
[ns] 80
60
TVJ = 125°C
VR = 270 V
15 A
30 A
60 A
700
600
tfr
TVJ = 125°C
VR = 270 V
IF = 30 A
500
tfr 400
[ns] 300
200
100
16
VFR
14
12
10
VFR
8
[V]
6
4
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRR versus TVJ
40
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
02
0 200 400 600
-diF /dt [A/μs]
Fig. 6 Typ. forward recov. voltage
VFR & time tfr versus diF /dt
50
TVJ = 125°C
VR = 270 V
40
60 A
30 A
1.0
0.8
30
Erec
20
[μJ]
10
15 A ZthJC 0.6
[K/W] 0.4
0.2
0
0 200 400 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.0
1
10 100 1000
t [ms]
Fig. 8 Transient thermal impedance junction to case
1000 0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet DPG30I400HA.PDF ] |
Número de pieza | Descripción | Fabricantes |
DPG30I400HA | High Performance Fast Recovery Diode | IXYS |
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