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PDF UTC9015 Data sheet ( Hoja de datos )
| Número de pieza | UTC9015 | |
| Descripción | PNP EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UTC 9015
PNP EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL &
LOW NOISE
FEATURES
*High total power dissipation. (450mW)
*Excellent hFE linearity.
*Complementary to UTC 9014
1
TO-92
1: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
-50
Collector-emitter voltage
VCEO
-45
Emitter-base voltage
VEBO
-5
Collector current
Ic -100
Collector dissipation
Pc 450
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
2: BASE
3: COLLECTOR
UNIT
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage
BVCBO
Ic=-100µA, IE=0
-50
Collector-emitter breakdown voltage BVCEO
Ic=-1mA, IB=0
-45
Emitter-base breakdown voltage
BVEBO
IE=-100µA, Ic=0
-5
Collector cutoff current
ICBO
VCB=-50V, IE=0
Emitter cutoff current
IEBO
VEB=-5V, IC=0
DC current gain
hFE
VCE=-5V, Ic=-1mA
60
Collector-emitter saturation voltage VCE(sat)
Ic=-100mA, IB=-5mA
Base-emitter saturation voltage
VBE(sat)
Ic=-100mA, IB=-5mA
Base-emitter on voltage
VBE(on)
VCE=-5V, Ic=-2mA
-0.6
Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Current gain-Bandwidth Porduct
fT
VCE=-5V, Ic=-10mA
100
Noise Figure
NF VCE=-5V, Ic=-0.2mA
f=1KHz, Rs=1KΩ
TYP
200
-0.2
-0.82
-0.65
4.5
190
0.7
MAX
-50
-100
600
-0.7
-1.0
-0.75
7.0
10
UNIT
V
V
V
nA
nA
V
V
V
pF
MHz
dB
CLASSIFICATION OF hFE
RANK
A
RANGE
60-150
B
100-300
UTC UNISONIC TECHNOLOGIES
C
200-600
CO., LTD.
1
QW-R201-032,A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet UTC9015.PDF ] | |
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