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Teilenummer | MS10N65SJ |
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Beschreibung | N-Channel MOSFET | |
Hersteller | Bruckewell | |
Logo | ||
Gesamt 6 Seiten MS10N65SJ 10A 650V
N-Channel Super Junction MOSFET
GENERAL DESCRIPTION
The MS10N65SJ is a N-channel enhancement-mode MOSFET , providing
the designer with the best combination of fast switching, super junction
device design, low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all commercial-industrial applications
FEATURES
• Low RDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Symbol
ID
ID, pulse
E AS
I AR
dv/dt
VGS
Ptot
Tj, Tstg
Value
Tc=25oC
Tc=25oC
ID=8.3A
limited by Tjmax
VDS=480V, ID=9.5A,
Tj=125oC
static
AC (f>1Hz)
Tc=25oC
Operating Junction and Storage Temperature
a When mounted on 1inch square 2oz copper clad FR-4
9.5
28.5
340
5
50
±20
±30
95
-50 to +150
150
Unit
A
A
mJ
A
V/nS
V
V
W
°C
°C
©Bruckewell Technology Corporation Rev. A -2013
MS10N65SJ 10A 650V
N-Channel Super Junction MOSFET
Legal Disclaimer Notice
Disclaimer
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©Bruckewell Technology Corporation Rev. A -2013
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ MS10N65SJ Schematic.PDF ] |
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