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PDF CMZ22 Data sheet ( Hoja de datos )

Número de pieza CMZ22
Descripción Silicon Diffused Type Zener Diode
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! CMZ22 Hoja de datos, Descripción, Manual

TOSHIBA Zener Diode Silicon Diffused Type
CMZ22, CMZ53
CMZ22, CMZ53
Applications:
Communication, Control and
Measurement Equipment
Constant Voltage Regulation
Transient Suppressors
Unit: mm
Average power dissipation : P = 2 W
Zener voltage
: VZ = 22 ,53 V
Suitable for compact assembly due to small
surface-mount package
“MFLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power dissipation
Symbol Rating Unit
P 2 (Note 1) W
1. Anode
2. Cathode
Junction temperature
Tj 40 to 150 °C
Storage temperature range Tstg 40 to 150 °C
Note 1: Ta = 30°C
Device mounted on a ceramic board
Board size
: 50 mm × 50 mm
Land pattern size : 2 mm × 2 mm
Board thickness : 0.64 mm
JEDEC
JEITA
TOSHIBA
Weight: 0.023 g (typ.)
3-4E1S
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Land Pattern Dimensions (for reference only)
Unit: mm
1.4 3.0
1.4
1
Start of commercial production
2002-10
2015-05-15

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