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PDF FJBE2150D Data sheet ( Hoja de datos )
| Número de pieza | FJBE2150D | |
| Descripción | NPN Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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January 2016
FJBE2150D
ESBC™ Rated NPN Silicon Transistor
ESBC Features (FDC655 MOSFET)
VCS(ON)
0.131 V
IC
0.5 A
Equiv. RCS(ON)
0.261 Ω(1)
• Low Equivalent On Resistance
• Very Fast Switch: 150 kHz
• Squared RBSOA: Up to 1500 V
• Avalanche Rated
• Low Driving Capacitance, No Miller Capacitance
Typ. 12 pF Capacitance at 200 V)
• Low Switching Losses
• Reliable HV Switch: No False Triggering due to
High dv/dt Transients
Applications
• High-Voltage and High-Speed Power Switches
• Emitter-Switched Bipolar/MOSFET Cascode
(ESBC™)
• Smart Meters, Smart Breakers,
HV Industrial Power Supplies
• Motor Drivers and Ignition Drivers
Description
The FJBE2150D is a low-cost, high-performance power
switch designed to be used in an ESBC™ configuration in
applications such as: power supplies, motor drivers,
smart grid, or ignition switches. The power switch is
designed to operate up to 1500 volts and up to 3 amps,
while providing exceptionally low on-resistance and very
low switching losses.
The ESBC™ switch is designed to be driven using off-the-
shelf power supply controllers or drivers. The ESBC™
MOSFET is a low-voltage, low-cost, surface-mount
device that combines low-input capacitance and fast
switching. The ESBC™ configuration further minimizes
the required driving power because it does not have
Miller capacitance.
The FJBE2150D provides exceptional reliability and a
large operating range due to its square Reverse-Bias-
Safe-Operating-Area (RBSOA) and rugged design. The
device is avalanche rated and has no parasitic transis-
tors, so is not prone to static dv/dt failures.
The power switch is manufactured using a dedicated
high-voltage bipolar process and is packaged in high-volt-
age HV-D2PAK rated at 2500 V creepage and clearance.
3
12
D2-PAK 2L
1.Base 2.Emitter 3.Collector
Figure 1. Pin Configuration
C (3)
(1)
B
E (2)
Figure 2. Internal Schematic Diagram
C
B FJBE2150D
FDC655
G
S
Figure 3. ESBC Configuration(2)
Ordering Information
Part Number
FJBE2150DTU
Marking
J2150D
Package
D2-PAK 2L (TO-263 2L)
Notes:
1. Figure of Merit.
2. Other Fairchild MOSFETs can be used in this ESBC application.
Packing Method
Tube
© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
3
1A
900mA
800mA
700mA
600mA
2 500mA
400mA
300mA
200mA
I =100mA
B
1
0
01234567
V [V ], C O LL E C T O R E M IT T E R V O L T AG E
CE
Figure 4. Static Characteristic
100
IC = 3 IB
10
TA = 125 o C
1
TA = 25 o C
0.1
TA = - 25 oC
0.01
1E-3
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 6. Collector-Emitter Saturation Voltage
hFE = 3
100
IC = 10 IB
10
TA = 125 o C
1 TA = 25 o C
TA = -25 oC
0.1
1E-3
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 8. Collector-Emitter Saturation Voltage
hFE = 10
VCE=10V
100
TA=125oC
T =25oC
A
10
1
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 5. DC Current Gain
100
IC = 5 IB
10 TA = 125 o C
TA = 25 o C
1
TA = -25 oC
0.1
1E-3
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 7. Collector-Emitter Saturation Voltage
hFE = 5
100
IC = 20 IB
10
TA = 125 o C
TA = 25 o C
1 TA = -25 oC
0.1
1E-3
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 9. Collector-Emitter Saturation Voltage
hFE = 20
© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4
5
www.fairchildsemi.com
5 Page 
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Figure 30. 8 W; Secondary-Side Regulation: 3 Capacitor Input; Quasi Resonant
Driving ESBC Switches
Figure 31. VCC Derived
Figure 32. Vbias Supply Derived
Figure 33. Proportional Drive
© 2013 Fairchild Semiconductor Corporation
FJBE2150D Rev. 1.4
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet FJBE2150D.PDF ] | |
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