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ME2345-G Schematic ( PDF Datasheet ) - Matsuki

Teilenummer ME2345-G
Beschreibung P-Channel Enhancement Mode Mosfet
Hersteller Matsuki
Logo Matsuki Logo 




Gesamt 5 Seiten
ME2345-G Datasheet, Funktion
P-Channel Enhancement Mode Mosfet
GENERAL DESCRIPTION
The ME2345 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(SOT-23)
Top View
ME2345(-G)
FEATURES
RDS(ON) 65m@VGS=-10V
RDS(ON) 75m@VGS=-4.5V
RDS(ON) 105m@VGS=-2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
e Ordering Information: ME2345 (Pb-free)
ME2345-G (Green product-Halogen free) (Green
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current(Tj=150)*
Pulsed Drain Current
Maximum Power Dissipation*
Operating Junction Temperature
TA=25
TA=70
TA=25
TA=70
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJA
Limit
-30
±12
-3.65
-2.9
-15
1.4
0.9
-55 to 150
T≦10 sec
90
Steady State
120
Unit
V
V
A
A
W
℃/W
e * The device mounted on 1in2 FR4 board with 2 oz copper, the current rating is based on t≦10 sec Rja rating.
Apr, 2008-Ver1.0
01





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