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PDF NP16N04YUG Data sheet ( Hoja de datos )
| Número de pieza | NP16N04YUG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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NP16N04YUG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0362EJ0100
Rev.1.00
Jun 13, 2011
Description
The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
• Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON
Ordering Information
Part No.
NP16N04YUG-E1-AY ∗1
NP16N04YUG-E2-AY ∗1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel Taping (E1 type)
Taping (E2 type)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ∗2
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗3
Repetitive Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±16
±48
36
1.0
175
−55 to +175
13
12
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
4.17
150
°C/W
°C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area (35 μm)
∗3. Tch(peak) ≤ 150°C, RG = 25 Ω
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Caution This product is an electrostatic-sensitive device due to low ESD capability and should be handled
with caution for electrostatic discharge. HBM (C = 100 pF, R = 1.5 kΩ) ± 500 V.
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Page 1 of 6
1 page  
NP16N04YUG
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
50
45 VGS = 10 V
ID = 8 A
40 Pulsed
35
30
25
20
15
10
5
0
-100 -50
0
50 100 150 200
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
10 td(on)
tf
tr
1
0.1 1 10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
10 0 V
1
0.1
0
Pulsed
0.2 0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
100
Coss
Crss
10
VGS = 0 V
f = 1 MHz
1
0.01
0.1
1
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35 12
VDD = 32 V
ID = 16 A
30 20 V
8V
10
25
8
20
VGS
6
15
4
10
5
2
VDS
00
0 2 4 6 8 10 12 14 16 18
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10 100
IF - Drain Current - A
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP16N04YUG.PDF ] | |
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