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PDF MMBT2222A Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222A | |
| Descripción | NPN Small Signal Transistor | |
| Fabricantes | Taiwan Semiconductor | |
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 1. NPN Planar Transistor - Cystek  Hay una vista previa y un enlace de descarga de MMBT2222A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Small Signal Product
MMBT2222A
Taiwan Semiconductor
300mW, NPN Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260oC/10s
- Weight: 8mg (approximately)
- Marking Code: 1P
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 300
Collector-Base Voltage
VCBO
75
Collector-Emitter Voltage
VCEO
40
Emitter-Base Voltage
VEBO
6
Collector Current
IC 600
Junction and Storage Temperature Range
TJ , TSTG
-55 to +150
Notes:1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
Collector-Base Breakdown Voltage
IC = 10 μA IE = 0
Collector-Emitter Breakdown Voltage
IC = 10 mA IB = 0
Emitter-Base Breakdown Voltage
IE = 10 μA IC = 0
Collector Cut-off Current
VCB = 60 V IE = 0
Collector Cut-off Current
VCE = 60 V
VBE(OFF) = 3 V
Emitter Cut-off Current
VEB = 3 V
IC = 0
VCE = 10 V IC = 500 mA
VCE = 10 V IC = 150 mA
DC Current Gain
VCE = 10 V IC = 10 mA
VCE = 10 V IC = 1 mA
VCE = 10 V IC = 0.1 mA
Collector-Emitter Saturation Voltage
IC = 500 mA IB = 50 mA
Base-Emitter Saturation Voltage
IC = 500 mA IB = 50 mA
Transition frequency
VCE = 20 V
IC = 10 mA f= 100MHz
Output Capacitance
VCB= 10V
IE = 0
f= 1.0MHz
Input Capacitance
VEB= 0.5V
IC = 0
f= 1.0MHz
Delay Time
VCC=30V
VBE(off)= -0.5V IC=150mA
Rise Time
IB1=15mA
Storage Time
VCC=30V
IC=150mA IB1= -IB2=15mA
Fall Time
VCC=30V
IC=150mA IB1= -IB2=15mA
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
td
tr
ts
tf
MIN
MAX
75 -
40 -
6-
- 0.01
- 0.01
- 0.1
40 -
100 300
75 -
50 -
35 -
-1
-2
300 -
8
25
- 10
- 25
- 225
- 60
UNIT
mW
V
V
V
mA
oC
UNIT
V
V
V
μA
μA
μA
V
V
MHz
pF
pF
ns
ns
ns
ns
Document Number: DS_S1502003
Version: D15
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBT2222A.PDF ] | |
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