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PDF H8050 Data sheet ( Hoja de datos )
| Número de pieza | H8050 | |
| Descripción | NPN Transistors | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
NPN Tra nsistors
H8050
Transistors
■ Features
● Collector Power Dissipation: PC=0.5W
● Collector Current: IC=1.5A
● Comlementary to H8550
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
40
25
5
1.5
0.5
150
-55 to +150
Unit
V
V
V
A
W
℃
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
output capacitance
Transition frequency
■ Classification of hfe(1)
Type
Range
Marking
H8050-B
85-160
8050B
H8050-C
120-200
8050C
Symbol
Test conditions
VCBO IC= 100μA, IE=0
VCEO IC= 0.1mA, IB=0
VEBO IE= 100μA, IC=0
ICBO VCB= 40 V,IE=0
ICEO VCE= 20V, IB=0
IEBO VEB= 5V, IC=0
VCE= 1V, IC= 100mA
hFE
VCE= 1V, IC= 800mA
VCE(sat) IC=800mA, IB= 80mA
VBE(sat) IC=800mA, IB=80mA
VBE(on) Ic=1V,VCE=10mA
VBEF IB=1A
Cob VCB=10V,IE=0,f=1MHz
fT VCE= 10V, IC=50mA
H8050-D
160-300
8050D
H8050-D3
300-400
8050D3
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
40 V
25 V
5V
0.1 μA
0.1 μA
0.1 μA
85 400
40
0.5 V
1.2 V
1V
1.55 V
15 pF
100 MHz
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet H8050.PDF ] | |
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