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PDF AP15TP1R0Y Data sheet ( Hoja de datos )
| Número de pieza | AP15TP1R0Y | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP15TP1R0Y
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
▼ Lower Gate Charge
▼ Small Footprint & Low Profile Package
▼ RoHS Compliant & Halogen-Free
S
D
D
SOT-26
G
D
D
Description
AP15TP1R0 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SOT-26 package is widely used for all commercial-industrial
applications.
BVDSS
RDS(ON)
ID3
G
-150V
1Ω
-1A
D
S
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
-150
V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
+25
-1
-0.78
-4
V
A
A
A
PD@TA=25℃
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
2
-55 to 150
-55 to 150
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
℃/W
1
201507151
1 page  
AP15TP1R0Y
2
I D = -1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
2.4
2
1.6
1.2
0.8
0.4
0
0 50 100
T A , Ambient Temperature( o C)
Fig 14. Total Power Dissipation
150
1600
T j =25 o C
1400
1200
1000
.-6.0V
V GS = -10V
800
600
400
012345
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP15TP1R0Y.PDF ] | |
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