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MM10FU120K Schematic ( PDF Datasheet ) - Thinki Semiconductor

Teilenummer MM10FU120K
Beschreibung SwitchMode Single Fast Recovery Epitaxial Diode
Hersteller Thinki Semiconductor
Logo Thinki Semiconductor Logo 




Gesamt 3 Seiten
MM10FU120K Datasheet, Funktion
MM10FU120K
®
MM10FU120K
Pb
Pb Free Plating Product
10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-220AC/TO-220C-2P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
MM10FU120K using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
V RRM
I F(AV)
I F(RMS)
I FSM
PD
TJ
T STG
Torque
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
TC=110°C
TC=110°C
TJ=45°C, t=10ms, 50Hz, Sine
RecommendedM3
1200
1200
10
15
100
70
-40 to +150
-40 to +150
1.1
V
V
A
A
A
W
°C
°C
N·m
R θJC
Thermal Resistance
Junction-to-Case
1.8 °C /W
Weight
ELECTRICAL CHARACTERISTICS
2.2 g
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IRM Reverse Leakage Current
VR=1200V
VR=1200V, TJ=125°C
-- -- 100 µA
-- -- 500 µA
VF Forward Voltage
I F =10A
IF=10A, TJ=125°C
-- 2.4 --
-- 1.85 --
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 22 --
ns
trr Reverse Recovery Time
VR=600V, IF=10A
-- 44 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 3.5 --
A
trr Reverse Recovery Time
VR=600V, IF=10A
-- 220 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 6.5 --
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/





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