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Datasheet ULBM2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | ULBM2 | NPN SILICON RF POWER TRANSISTOR ULBM2
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM2 is Designed for
PACKAGE STYLE .280 4L STUD FEATURES:
• • • Omnigold™ Metalization System
45° B A
D
C J
MAXIMUM RATINGS
E
I
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
0.75 A 36 V 16 V 36 V 4.0 V 5 W @ TC = 25 C -65 C |
 Advanced Semiconductor |
 |
| 4 | ULBM25 | NPN SILICON RF POWER TRANSISTOR ULBM25
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM25 is Designed for
PACKAGE STYLE .500 6L FLG FEATURES:
• • • Omnigold™ Metalization System
D C A 2x ØN FULL R
B
E .725/18,42 F K M L MAXIMUM
inches / mm
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
G
4.8 |
Advanced Semiconductor |
|
| 3 | ULBM2SL | NPN SILICON RF POWER TRANSISTOR ULBM2SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM2SL is Designed for
PACKAGE STYLE .280 4L PILL
A
FEATURES:
• • • Omnigold™ Metalization System
ØB
MAXIMUM RATINGS
ØC
IC VCBO VCER VCES VEBO PDISS TJ TSTG θ JC
0.75 A 36 V 16 V 36 V 4.0 V 5.0 W @ TC = 25 C -65 OC to +20 |
Advanced Semiconductor |
|
| 2 | ULBM2T | NPN SILICON RF POWER TRANSISTOR ULBM2T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM2T is Designed for
PACKAGE STYLE TO-39
B ØA 45° C
FEATURES:
• • • Omnigold™ Metalization System
ØD E
MAXIMUM RATINGS
IC VCB0 VCEO VCES VEBO PDISS TJ TSTG θ JC
O
F
0.75 A 36 V 16 V 36 V 4.0 V 5 W @ TC = 25 C -65 C to + |
Advanced Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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