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Datasheet TK10A60E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | TK10A60E | MOSFETs TK10A60E
MOSFETs Silicon N-Channel MOS (π-MOS)
TK10A60E
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) Enhancement mode: Vth = 2.5 to 4.0 V (V |
Toshiba Semiconductor |
TK10A Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
TK10A50D | Field Effect Transistor |
Toshiba |
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TK10A60D | Field Effect Transistor |
Toshiba |
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TK10A60W | MOSFETs |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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