Datasheet TK10A60D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
2	TK10A60D	Field Effect Transistor TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (	Toshiba
1	TK10A60D	Switching Regulator Applications TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage cu	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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