Datasheet T30N60BD1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	T30N60BD1	IXST30N60BD1 High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.0 V = 140 ns Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C	IXYS Corporation

T30N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
T30N60BD1	IXST30N60BD1 High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.0 V = 140 ns Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous T	IXYS Corporation

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