Datasheet SGS5N150UF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SGS5N150UF	General Description SGS5N150UF IGBT SGS5N150UF General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @	Fairchild Semiconductor

SGS5N15 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SGS5N150UF	General Description SGS5N150UF IGBT SGS5N150UF General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage :	Fairchild Semiconductor
SGS5N150	General Description SGS5N150UF IGBT SGS5N150UF General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage :	Fairchild Semiconductor

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