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Datasheet S9013LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | S9013LT1 | NPN Epitaxial Silicon Transistor S9013LT1 NPN Epitaxial Silicon Transistor
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION.
SOT-23
Collector-Emitter Voltage: VCEO= 25V Collector Dissipation: PC=300mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collector-Emi |
 Elite |
 |
| 2 | S9013LT1 | Plastic Encapsulate Transistors
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SOT¡ª 23
S9013LT1
FEATURES
1. BASE
TRANSISTOR£¨NPN £©
2. EMITTER 3. COLLECTOR
Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 0.5 A Collector-base volta |
 Jiangsu Changjiang Electronics Technology |
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| 1 | S9013LT1 | NPN General Purpose Transistors
S9013LT1
3 1 2
SOT-23
V CEO Value 25 40 5.0 500
S9013LT1=J3
0.1 100 100
25 40
E=20 Vdc, I E= 0 ) 40 5.0
O
0.1 0.1 0.1
u
u u
WEITRON
http://www.weitron.com.tw
S9013LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) |
 Weitron Technology |
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