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RU1H35S PDF ( Data Sheet )

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1 RU1H35S   N-Channel Advanced Power MOSFET

RU1H35S N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-2
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