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Datasheet RM10Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | RM10Z | Rectifier Diodes Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) max VF (V) IF (A) IR (µA) VR = VRM max IR (H) (µA) VR = VRM Ta =100°C max Rth (j- ) (°C/ W)
Others Mass Fig. (g)
T |
 Sanken electric |
 |
| 2 | RM10Z | Rectifier Diodes Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
Electrical Characteristics (Ta = 25°C) Tstg (°C) max VF (V) IF (A) IR (µA) VR = VRM max IR (H) (µA) VR = VRM Ta =100°C max Rth (j- ) (°C/ W)
Others Mass Fig. (g)
T |
Sanken electric |
|
| 1 | RM10Z | SILICON RECTIFIER DIODES RM10 - RM10Z
PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes
FEATURES :
* * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
SILICON RECTIFIER DIODES D2
0.161 (4.10) 0.154 (3.90) 1.00 (25.4) MIN.
0.284 (7.20) 0.268 (6.84)
MECHA |
 EIC discrete Semiconductors |
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