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RJP63K2DPP-M0 Datenblatt PDF

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1 RJP63K2DPP-M0   N-Channel IGBT

Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High
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RJP63K2DPP-M0

N-Channel IGBT

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