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RJP3049 Datenblatt PDF |
| No | Teilenummer | Beschreibung | Hersteller | |
| 19 | RJP3053DPP | IGBT April 2010 Renesas Electronics
Power MOSFETs and IGBT for PDP
Merits
Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching
PDP System PDP trends
Scan IC
Power device
High breakdown voltage |
 Renesas Technology |
 |
| 18 | RJP3054DPP | IGBT April 2010 Renesas Electronics
Power MOSFETs and IGBT for PDP
Merits
Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching
PDP System PDP trends
Scan IC
Power device
High breakdown voltage |
Renesas Technology |
|
| 17 | RJP3055DPP | IGBT April 2010 Renesas Electronics
Power MOSFETs and IGBT for PDP
Merits
Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching
PDP System PDP trends
Scan IC
Power device
High breakdown voltage |
Renesas Technology |
|
| 16 | RJP3056DPK | IGBT April 2010 Renesas Electronics
Power MOSFETs and IGBT for PDP
Merits
Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching
PDP System PDP trends
Scan IC
Power device
High breakdown voltage |
Renesas Technology |
|
| 15 | RJP3057DPK | IGBT April 2010 Renesas Electronics
Power MOSFETs and IGBT for PDP
Merits
Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching
PDP System PDP trends
Scan IC
Power device
High breakdown voltage |
Renesas Technology |
|
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