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2 RJK5012DPP   Silicon N Channel MOS FET High Speed Power Switching

RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0100 Rev.1.00 May 10, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0
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Datenblatt RJK5012DPP pdf
1 RJK5012DPP-E0   MOS FET

Preliminary Datasheet RJK5012DPP-E0 500V - 12A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0561EJ
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Datenblatt RJK5012DPP-E0 pdf


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