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1 RJK0389DPA   Silicon N Channel Power MOS FET Power Switching

RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.3.00 Dec 03, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High de
Renesas Technology
Renesas Technology
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Teilenummer Beschreibung Hersteller PDF
RJK0389DPA

Silicon N Channel Power MOS FET Power Switching

Renesas Technology
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