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RJH30H2DPK-M0 Datenblatt PDF |
| No | Teilenummer | Beschreibung | Hersteller | |
| 1 | RJH30H2DPK-M0 | High Speed Power Switching Preliminary Datasheet
RJH30H2DPK-M0
Silicon N Channel IGBT High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High |
 Renesas |
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RJH30H2DPK-M Datasheet - resultados coincidentes |
| Teilenummer | Beschreibung | Hersteller | |
| RJH30H2DPK-M0 | High Speed Power Switching |
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