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RJH30H2DPK-M0 Data Sheet ( PDF Datenblatt ) |
No | Teilenummer | Beschreibung | Hersteller | |
1 | RJH30H2DPK-M0 | High Speed Power Switching Preliminary Datasheet
RJH30H2DPK-M0
Silicon N Channel IGBT High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High |
![]() Renesas |
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RJH30H2DPK-M Datasheet - resultados coincidentes |
Teilenummer | Beschreibung | Hersteller | |
RJH30H2DPK-M0 | High Speed Power Switching |
![]() Renesas |
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Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
![]() STMicroelectronics |
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SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
![]() WINSEMI SEMICONDUCTOR |
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RLD78NZM5 | 780nm low power single mode laser diode |
![]() ROHM |
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