Datenblatt-pdf.com RJH30H2DPK-M0 Datenblatt


RJH30H2DPK-M0 Datenblatt PDF

No Teilenummer Beschreibung Hersteller PDF
1 RJH30H2DPK-M0   High Speed Power Switching

Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High
Renesas
Renesas
Datenblatt RJH30H2DPK-M0 pdf


RJH30H2DPK-M Datasheet - resultados coincidentes

Teilenummer Beschreibung Hersteller PDF
RJH30H2DPK-M0

High Speed Power Switching

Renesas
Renesas
pdf datasheet


Link teilen :
[1] 


Neueste Updates

Teilenummer Beschreibung Hersteller PDF
TDA7468

TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR.

STMicroelectronics

STMicroelectronics
PDF
SBW3320

High Voltage Fast-Swit NPN Power Transistor

WINSEMI SEMICONDUCTOR

WINSEMI SEMICONDUCTOR
PDF
RLD78NZM5

780nm low power single mode laser diode

ROHM

ROHM
PDF


www.Datenblatt-PDF.com    |  2019    |  Kontakt   |