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RJH30H2DPK-M0 Data Sheet ( PDF Datenblatt )

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1 RJH30H2DPK-M0   High Speed Power Switching

Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High
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RJH30H2DPK-M0

High Speed Power Switching

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