Datasheet RJH1CD6DPQ-A0 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJH1CD6DPQ-A0	IGBT Preliminary Datasheet RJH1CD6DPQ-A0 1200 V - 20 A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (trr = 100 ns typ.) in	Renesas

RJH1CD6DPQ Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJH1CD6DPQ-E0	IGBT Preliminary Datasheet RJH1CD6DPQ-E0 1200V - 25A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr	Renesas
RJH1CD6DPQ-A0	IGBT Preliminary Datasheet RJH1CD6DPQ-A0 1200 V - 20 A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (t	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
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