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Datasheet RJH1BF7RDPQ-80 Equivalent ( PDF ) |
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1 | RJH1BF7RDPQ-80 | High Speed Power Switching Preliminary Datasheet
RJH1BF7RDPQ-80
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V |
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RJH1BF7RDPQ Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
RJH1BF7RDPQ-80 | High Speed Power Switching |
Renesas |
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