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Datasheet PHILIPS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | PHI214-0851 | Radar Pulsed Power Transistor/ 0.85W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz ,z== i--s L-J =7 f
.------
z z = =
*
an AMP company
Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry Diffused Emirter Ballasting Resistor |
 Tyco Electronics |
 |
| 9 | PHI214-20EL | Radar Pulsed Power Transistor/ 2OW/ 2ms Pulse/ 10% Duty 1.2 - 1.4 GHz *
an AMP company
-F--z = -=-=c
=z z .-----= = E
Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL
Features
l l l l l l l l
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffus |
Tyco Electronics |
|
| 8 | PHI214-25L | Radar Pulsed Power Transistor/ 25W/ 300ms Pulse/ 10% Duty 1.2 - 1.4 GHz = =z
an AMP company
SC= z
=
Radar Pulsed Power Transistor, 25W, 300~s Pulse, 10% Duty PHI 214-25L 1.2 - 1.4 GHz
v2.00
Features
l l l l l l l l
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter B |
Tyco Electronics |
|
| 7 | PHI214-25S | Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz an AMP
comnanv
Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty PHI21 4-25s 1.2 - 1.4 GHz
v2.00
Features ----- - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold M |
Tyco Electronics |
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