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Datasheet P45N02 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | P45N02 | 45A / 20V / 0.022 Ohm / N-Channel Logic Level Power MOSFETs RFP45N02L, RF1S45N02L, RF1S45N02LSM
May 1997
45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, |
 Intersil Corporation |
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| 4 | P45N02LD | N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P45N02LD
TO-252 (DPAK)
D
PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20mΩ ID 45A 1. GATE 2. DRAIN 3. SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuou |
 Niko-Sem |
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| 3 | P45N02LDG | N-Channel Enhancement Mode MOSFET P45N02LDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 20mΩ @VGS = 10V
ID 32A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Dr |
 UNIKC |
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| 2 | P45N02LDG | N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P45N02LDG
TO-252 (DPAK) Lead-Free
D
PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20m£[ ID 45A 1. GATE 2. DRAIN 3. SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Volta |
Niko-Sem |
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