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P400 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
5 | P400 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Bulletin I2776 rev. E 04/99
P400 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide |
International Rectifier |
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4 | P4004ED | P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
P-Channel Logic Level Enhancement Mode Field Effect Transistor
D
P4004ED
TO-252(DPAK) Halogen-Free & Lead-Free
PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 40mΩ ID -21A
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = |
NIKO-SEM |
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3 | P4004ED | P-Channel Enhancement Mode MOSFET P4004ED
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
40mΩ @VGS = -10V
ID -21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
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UNIKC |
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2 | P4006BV | N-Channel Enhancement Mode MOSFET P4006BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 40mΩ @VGS = 10V
ID 4.3A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Vol |
UNIKC |
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1 | P4006DV | P-Channel Enhancement Mode MOSFET P4006DV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
40mΩ @VGS = -10V
ID -5.9A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Sour |
UNIKC |
Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
STMicroelectronics |
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SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
WINSEMI SEMICONDUCTOR |
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RLD78NZM5 | 780nm low power single mode laser diode |
ROHM |
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