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Datasheet P10N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | P10N60 | SGP10N60 SGP10N60
SGB10N60, SGW10N60
Fast S-IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications |
 Infineon Technologies Corporation |
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| 1 | P10N60C | FQP10N60C FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
April 2007
QFET ®
Features
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt ca |
 Fairchild Semiconductor |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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