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Datasheet P0260AT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | P0260AT | N-Channel Enhancement Mode MOSFET P0260AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.4Ω @VGS = 10V
ID 2.8A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current2 Pulsed Drain Cur |
 UNIKC |
 |
| 2 | P0260ATF | N-Channel Enhancement Mode MOSFET P0260ATF / P0260ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.4Ω @VGS = 10V
ID 2A
TO-220F TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate |
UNIKC |
|
| 1 | P0260ATFS | N-Channel Enhancement Mode MOSFET P0260ATF / P0260ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.4Ω @VGS = 10V
ID 2A
TO-220F TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate |
UNIKC |
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