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Datasheet NGTB30N60IHLWG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NGTB30N60IHLWG   IGBT

NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited
ON Semiconductor
ON Semiconductor		 datasheet NGTB30N60IHLWG pdf

NGTB30N60IH Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NGTB30N60IHLWG

IGBT

NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The
ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor


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Número de pieza Descripción Fabricantes PDF
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