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Datasheet NGTB20N120LWG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NGTB20N120LWG   IGBT

NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited f
ON Semiconductor
ON Semiconductor
datasheet NGTB20N120LWG pdf

NGTB20N120 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NGTB20N120IHRWG

IGBT

NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on−state volta
ON Semiconductor
ON Semiconductor
datasheet pdf - ON Semiconductor
NGTB20N120IHLWG

IGBT

NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The
ON Semiconductor
ON Semiconductor
datasheet pdf - ON Semiconductor
NGTB20N120LWG

IGBT

NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The I
ON Semiconductor
ON Semiconductor
datasheet pdf - ON Semiconductor


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Número de pieza Descripción Fabricantes PDF
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