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NGB8207N PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
2 | NGB8207N | Ignition IGBT NGB8207N, NGB8207BN
Ignition IGBT
20 A, 365 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers |
ON Semiconductor |
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1 | NGB8207NT4G | Ignition IGBT NGB8207N, NGB8207BN
Ignition IGBT
20 A, 365 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers |
ON Semiconductor |
Teilenummer | Beschreibung | Hersteller | |
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STMicroelectronics |
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www.Datenblatt-PDF.com | 2020 | Kontakt | 1 | ALL |