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NGB8207N PDF ( Data Sheet )

No Teilenummer Beschreibung Hersteller PDF
2 NGB8207N   Ignition IGBT

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers
ON Semiconductor
ON Semiconductor
Datenblatt NGB8207N pdf
1 NGB8207NT4G   Ignition IGBT

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers
ON Semiconductor
ON Semiconductor
Datenblatt NGB8207NT4G pdf



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