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Datasheet NE202 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | NE202 | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
 NEC |
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| 5 | NE20248 | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
NEC |
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| 4 | NE20283A | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
NEC |
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| 3 | NE202930 | Silicon NPN Epitaxial High Frequency Transistor PreliminaryData Sheet
NE202930
Silicon NPN Epitaxial High Frequency Transistor
FEATURES
• • • • High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage (Less than 5 V) Suitable for up to 1 GHz applicati |
 Renesas |
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| Número de pieza | Descripción | Fabricantes | |
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